From left: Kyung-tae Kim (Professor, Department of Mechanical Engineering), Seung-hoe Gu (Postdoctoral Researcher), and Jun-gi Jeong (Ph.D. candidate) — Research Team of Professor Kyung-tae Kim

A research team led by Professor Kyung-tae Kim of the Department of Mechanical Engineering at Incheon National University (with Dr. Seung-hoe Gu and Ph.D. candidate Jun-gi Jeong) has published their findings in the internationally renowned journal Advanced Functional Materials through joint research with Sungkyunkwan University and Korea Institute of Science and Technology.

The study, titled “Unraveling Origin of Stochasticity in Multi-Filamentary Memristor,” systematically identifies the physical origin of stochastic switching behavior observed in multi-filament-based memristor devices by utilizing a nanoscale thermal measurement technique, Scanning Thermal Microscopy (SThM).

The research team achieved high-speed random output without post-processing by employing a porous nanorod structure, and further elucidated the intrinsic stochastic behavior of memristors through SThM analysis and simulation.

This achievement is expected to contribute not only to the development of high-reliability random number generators but also to applications in AI-based probabilistic computing and next-generation neuromorphic computing devices.